2SA1668 View Datasheet(PDF) - Quanzhou Jinmei Electronic

Part Name

Description

Manufacturer

2SA1668

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO

Collector-emitter

breakdown voltage

2SA1667

2SA1668

IC=-25mA ; IB=0

VCEsat Collector-emitter saturation voltage IC=-0.7A;IB=-70mA

ICBO

Collector cut-off

current

2SA1667 VCB=-150V;IE=0

2SA1668 VCB=-200V;IE=0

IEBO

Emitter cut-off current

VEB=-6V; IC=0

hFE

DC current gain

IC=-0.7A ; VCE=-10V

fT

Transition frequency

IC=-0.2A ; VCE=-12V

COB

Output capacitance

IE=0 ; VCB=10V;f=1MHz

Switching time

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=-1A ;IB1=-IB2=-0.1A

VCC=-20V ,RL=20Ω

Product Specification

2SA1667 2SA1668

MIN TYP. MAX UNIT

-150

V

-200

-1.0

V

-10

μA

-10

μA

-10

μA

60

20

MHz

60

pF

0.40

μs

1.50

μs

0.50

μs

2

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