2SA1900 View Datasheet(PDF) - ROHM Semiconductor

Part Name

Description

Manufacturer

2SA1900

Medium power transistor (−50V, −1A)

ROHM Semiconductor 

Transistors

2SA1900

Medium power transistor (−50V, −1A)

2SA1900

zFeatures

1) Low saturation voltage, typically VCE(sat) = −0.15V at IC /

IB = −500mA / −50mA

2) PC=2W (on 40×40×0.7mm ceramic board)

3) Complements the 2SC5053

zExternal dimensions (Unit : mm)

MPT3

4.5

1.6

1.5

(1)

(2)

(3)

0.4

0.4

0.5

0.4

(1)Base

1.5 1.5

3.0

(2)Collector

(3)Emitter

z Absolute maximum ratings (Ta=25°C)

Parameter

Symbol

Limits

Collector-base voltage

VCBO

−60

Collector-emitter voltage

VCEO

−50

Emitter- base voltage

VEBO

−5

Collector current

−1

IC

−2

0.5

Collector power dissipation

PC

2

Collector power dissipation

Storage temperature

Tj

150

Tstg

−55 to +150

∗1 Single pulse Pw=20ms, Duty=1/2

∗2 When mounted on a 40+ 40+ 0.7mm seramic board.

Unit

V

V

V

A

A (Pulse) ∗1

W

W

∗2

°C

°C

zExternal dimensions (Ta=25°C)

Parameter

Symbol

Collector-base breakdown voltage

Collector-emitter breakdown voltage

BVCBO

BVCEO

Emitter-base breakdown voltage

Collector cutoff current

BVEBO

ICBO

Emitter cutoff current

Collector-emitter saturation voltage

IEBO

VCE(sat)

DC current transfer ratio

hFE

Transition frequency

fT

Output capacitance

Cob

Min. Typ. Max. Unit

Conditions

−60

−

−

V IC=−50µA

−50

−

−

V IC=−1mA

−5

−

−

V IE=−50µA

−

−

−0.1

µA VCB=−40V

−

−

−0.1

µA VEB=−4V

−

−

−0.4

V IC/IB=−500mA/−50mA

120

−

270

− VCE/IC=−3V/−0.5A

−

150

−

MHz VCE=−5V , IE=50mA , f=100MHz

−

20

−

pF VCB=−10V , IE=0A , f=1MHz

zPackaging specifications and hFE

Type

2SA1900

Package

MPT3

hFE

Marking

Q

AL ∗

Code

T100

Basic ordering unit (pleces)

1000

∗ Denotes hFE

Rev.A

1/2

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