2SA1909 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SA1909

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

2SA1909

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0

-140

V

VCEsat Collector-emitter saturation voltage IC=-5 A;IB=-0.5 A

ICBO

Collector cut-off current

VCB=-140V; IE=0

IEBO

Emitter cut-off current

VEB=-6V; IC=0

-0.5

V

-10 μA

-10 μA

hFE

DC current gain

IC=-3A ; VCE=-4V

50

180

fT

Transition frequency

IC=-0.5A ; VCE=-12V

20

MHz

COB

Output capacitance

IE=0; VCB=-10V;f=1MHz

400

pF

Switching times

体 ton

Turn-on time

固I电NC半H导ANGE SEMICONDUCTOR ts

Storage time

tf

Fall time

‹ hFE classifications

O

P

Y

IC=-5A;RL=12Ω

IB1=-IB2=-0.5A;VCC=-60V

0.17

μs

1.86

μs

0.27

μs

50-100 70-140 90-180

2

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