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2SA1909 View Datasheet(PDF) - Quanzhou Jinmei Electronic

Part Name
Description
Manufacturer
2SA1909
JMNIC
Quanzhou Jinmei Electronic 
2SA1909 Datasheet PDF : 4 Pages
1 2 3 4
JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0
VCEsat Collector-emitter saturation voltage IC=-5 A;IB=-0.5 A
ICBO
Collector cut-off current
VCB=-140V; IE=0
IEBO
Emitter cut-off current
hFE
DC current gain
fT
Transition frequency
VEB=-6V; IC=0
IC=-3A ; VCE=-4V
IC=-0.5A ; VCE=-12V
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-5A;RL=12Ω
IB1=-IB2=-0.5A;VCC=-60V
‹ hFE classifications
O
P
Y
50-100 70-140 90-180
Product Specification
2SA1909
MIN TYP. MAX UNIT
-140
V
-0.5
V
-10 μA
-10 μA
50
180
20
MHz
400
pF
0.17
μs
1.86
μs
0.27
μs
2

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