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Part Name
Description
2SA1909 View Datasheet(PDF) - Quanzhou Jinmei Electronic
Part Name
Description
Manufacturer
2SA1909
Silicon PNP Power Transistors
Quanzhou Jinmei Electronic
2SA1909 Datasheet PDF : 4 Pages
1
2
3
4
JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
℃
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V
(BR)CEO
Collector-emitter breakdown voltage I
C
=-50mA; I
B
=0
V
CEsat
Collector-emitter saturation voltage I
C
=-5 A;I
B
=-0.5 A
I
CBO
Collector cut-off current
V
CB
=-140V; I
E
=0
I
EBO
Emitter cut-off current
h
FE
DC current gain
f
T
Transition frequency
V
EB
=-6V; I
C
=0
I
C
=-3A ; V
CE
=-4V
I
C
=-0.5A ; V
CE
=-12V
C
OB
Output capacitance
I
E
=0; V
CB
=-10V;f=1MHz
Switching times
t
on
Turn-on time
t
s
Storage time
t
f
Fall time
I
C
=-5A;R
L
=12
Ω
I
B1
=-I
B2
=-0.5A;V
CC
=-60V
h
FE
classifications
O
P
Y
50-100 70-140 90-180
Product Specification
2SA1909
MIN TYP. MAX UNIT
-140
V
-0.5
V
-10
μ
A
-10
μ
A
50
180
20
MHz
400
pF
0.17
μ
s
1.86
μ
s
0.27
μ
s
2
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