2SA684L-Q-AB3-R View Datasheet(PDF) - Unisonic Technologies

Part Name

Description

Manufacturer

2SA684L-Q-AB3-R

PNP SILICON TRANSISTOR

Unisonic Technologies 

2SA684

„ TYPICAL CHARACTERISTICS(Cont.)

PNP SILICON TRANSISTOR

-120

-100

Collector to Emitter Voltage vs.

Base to Emitter Resistance

IC=-10mA

Ta=25℃

-80

-60

-40

-20

0

0.1 0.3

1

3

10 30 100

Base to Emitter Resistance, RBE (KΩ)

Area Of Safe Operation (ASO)

-10

Single Pulse

-3 ICP

Ta=25℃

-1

t=10ms

-0.3

t=1s

-0.1

-0.03

-0.01

-0.003

-0.001

-0.1 -0.3

-1

-3

-10 -30 -100

Collector To Emitter Voltage, VCE (V)

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

Collector to Emitter Current vs.

Ambient Temperature

104

VCE=-10V

103

102

10

1

0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta (℃)

4 of 5

QW-R211-006.C

Share Link: