2SA627 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SA627

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ; IB=B 0

V(BR)CBO Collector-base breakdown voltage

IC=-1mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA ;IC=0

VCE(sat) Collector-emitter saturation voltage IC=-5A; IB=-0.5A

VBE(sat) Base-emitter saturation voltage

IC=-5A; IB=-0.5A

ICBO

Collector cut-off current

VCB=-100V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

IC=-2A ; VCE=-5V

fT

Transition frequency

IC=-0.5A ; VCE=-10V

Product Specification

2SA627

MIN TYP. MAX UNIT

-100

V

-100

V

-5

V

-2.0

V

-2.5

V

-0.1 mA

-0.1 mA

30

120

15

MHz

2

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