2SA483 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SA483

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

Silicon PNP Power Transistor

isc Product Specification

2SA483

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0

V(BR)CBO Collector-Base Breakdown Voltage

IC= -0.5mA ; IE= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB=B -50mA

VBE(on) Base-Emitter On Voltage

IC= -0.5A ; VCE= -10V

ICBO

Collector Cutoff Current

VCB= -150V ; IE= 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE

DC Current Gain

IC= -0.1A ; VCE= -10V

fT

Current-Gain—Bandwidth Product

IC= -0.1A ; VCE= -10V

COB

Output Capacitance

VCB= -10V; ftest= 1MHz

‹ hFE-1 Classifications

R

O

Y

30-80 70-140 120-240

MIN TYP. MAX UNIT

-150

V

-150

V

-1.8

V

-1.8

V

-100 μA

-100 μA

30

240

10

MHz

50

pF

isc Website：www.iscsemi.cn

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