2SA490 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SA490

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SA490

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -10mA ; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB=B -0.2A

VBE(on) Base-Emitter On Voltage

IC= -2A ; VCE= -2V

ICBO

Collector Cutoff Current

VCB= -30V ; IE= 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE-1

DC Current Gain

IC= -0.5A ; VCE= -2V

hFE-2

DC Current Gain

IC= -2A ; VCE= -2V

fT

Current-Gain—Bandwidth Product

IC= -0.5A ; VCE= -2V

COB

Output Capacitance

IE= 0; VCB= -10V; ftest= 1MHz

MIN TYP. MAX UNIT

-40

V

-5

V

-1.2

V

-1.8

V

-10 μA

-100 μA

40

240

13

3

MHz

150

pF

‹ hFE-1 Classifications

R

O

Y

40-80 70-140 120-240

isc Website：www.iscsemi.cn

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