2SB1016A View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SB1016A Datasheet PDF : 4 Pages
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−5
−250
−4
IC – VCE
−200
−150
−100
−3
−50
−2
IB = −20 mA
−1
Common emitter
Tc = 25°C
0
0
−1
−2
−3
−4
−5
−6
−7
Collector-emitter voltage VCE (V)
2SB1016A
IC – VBE
−5
Common emitter
VCE = −5 V
−4
−3
Tc = 75°C
25
−2
−25
−1
0
0 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 −2.8
Base-emitter voltage VBE (V)
hFE – IC
500
300
Tc = 75°C
100
25
−25
50
30
Common emitter
10
VCE = −5 V
5
−0.01 −0.03
−0.1
−0.3
−1
Collector current IC (A)
−3 −5
VCE (sat) – IC
−3
Common emitter
IC/IB = 10
−1
−0.5
−0.3
−0.1
−0.05
−0.03
−0.01
Tc = 75°C
25
−25
−0.03
−0.1
−0.3
−1
Collector current IC (A)
−3 −5
PC – Ta
50
Tc = Ta
Infinite heat sink
40
30
20
10
0
0
25
50
75
100
125
150
Ambient temperature Ta (°C)
Safe Operating Area
−20
−10 IC max (pulsed)*
−5 IC max (continuous)
1 s*
−3
DC operation
Tc = 25°C
1 ms*
10 ms*
100 ms*
−1
*: Single nonrepetitive
−0.5 pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
−0.2
−3
−10
VCEO max
−30
−100
Collector-emitter voltage VCE (V)
3
2006-11-21
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