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Part Name
Description
B1012K View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
Manufacturer
B1012K
Silicon PNP Epitaxial
Hitachi -> Renesas Electronics
B1012K Datasheet PDF : 6 Pages
1
2
3
4
5
6
Maximum Collector Dissipation Curve
30
20
10
0
50
100
150
Case Temperature T
C
(
°
C)
Typical Output Characteristics
–5
–4
T
C
= 25
°
C
Pulse
–7 mA –5 mA
–3
–3 mA
–1
mA
–2
–0.5
mA
–1
I
B
= –0.3 mA
0
–1
–2
–3
–4
–5
Collector to emitter Voltage V
CE
(V)
2SB1012(K)
–3
–1.0
Area of Safe Operation
i
C (peak)
I
C (max)
–0.3
–0.1
–0.03
Ta = 25
°
C
1 Shot pulse
–0.01
–0.003
–3
–10
–30
–100 –300
Collector to emitter Voltage V
CE
(V)
30,000
10,000
DC Current Transfer Ratio vs.
Collector Current
V
CE
= –3 V
3,000
1,000
300
100
Ta
= 75
°
C
25
°
C
–25
°
C
Pulse Test
30
–0.03
–0.1
–0.3
–1.0
–3
Collector current I
C
(A)
3
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