B1007 View Datasheet(PDF) - SavantIC Semiconductor

Part Name

Description

Manufacturer

B1007

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB1007

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-2mA ;IB=0

V(BR)CBO Collector-base breakdown voltage

IC=-50µA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-50µA ;IC=0

VCEsat Collector-emitter saturation voltage IC=-0.5A ;IB=-50mA

ICBO

Collector cut-off current

VCB=-50V; IE=0

IEBO

Emitter cut-off current

VEB=-4V; IC=0

hFE

DC current gain

IC=-0.1A ; VCE=-3V

COB

Output capacitance

IE=0; VCB=-10V;f=1MHz

fT

Transition frequency

IE=50mA ; VCE=-10V

MIN TYP. MAX UNIT

-80

V

-80

V

-5

V

-0.2 -0.4

V

-0.5

µA

-0.5

µA

82

390

14

20

pF

100

MHz

hFE Classifications

P

Q

82-180

120-270

R

180-390

2

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