2SB1132L-P-TN3-R View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
Manufacturer
2SB1132L-P-TN3-R Datasheet PDF : 5 Pages
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2SB1132
TYPICAL CHARACTERISTICS(Cont.)
Gain Bandwidth Product
vs. Emitter Current
TA=25°C
VCE = -5V
200
100
50
20
-1
-2
-5 -10 -20 -50 -100
Emitter Current, IB(mA)
Safe Operation Area
-5
-2
-1
-0.5
-0.2
-0.1
-0.05
-0.02
TA=25°C
*Single pulse
-0.01
0 -0.2 -0.5 -1 -2
-5 -10 -20 -50
Collector to Emitter Voltage, VCE(V)
Power Derating
1.6
1.4
1.2
TO-252
1
0.8
0.6 SOT-89
0.4
0.2
0.00 25 50 75 100 125 150 175
Ambient Temperature, TA ( )
PNP SILICON TRANSISTOR
Collector Output Capacitance
vs.Collector-Base Voltage
100
TA=25°C
f=1MHz
IE=0A
50
20
10
-0.5 -1
-2
-5 -10 -20
Collector to Base Voltage, VCB(V)
1000
Transient Thermal Resistance
TA=25°C
100
10
1
0.1
0.001 0.01
0.1 1 10 100 1000
Time, t(s)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R208-016.C
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