2SB1151L View Datasheet(PDF) - Unisonic Technologies

Part Name

Description

Manufacturer

2SB1151L

PNP EPITAXIAL SILICON TRANSISTOR

Unisonic Technologies 

2SB1151

PNP EPITAXIAL SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATING (Ta=25 )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-60

V

Collector-Emitter Voltage

VCEO

-60

V

Emitter-Base Voltage

VEBO

-7

V

Collector Current

DC

IC

-5

A

Pulse(Note 3)

ICP

-8

Base Current

IB

-1

A

Power Dissipation

Ta=25℃

Tc=25℃

PD

1.5

20

W

Junction Temperature

TJ

125

Operating Temperature

TOPR

0 ~ +70

Storage Temperature

TSTG

-40 ~ +150

Note 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2.The device is guaranteed to meet performance specification within 0℃~70℃ operating temperature range

and assured by design from -40℃~ 85℃.

3.PW ≤10ms, Duty Cycle ≤50%

ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified.)

PARAMETER

Collector Cut-off Current

Emitter Cut-off Current

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

DC Current Gain

Switching Time

Turn On Time

Storage Time

Fall Time

SYMBOL

TEST CONDITIONS

ICBO VCB=-50V, IE=0

IEBO VEB=-7V, IC=0

VCE(sat) IC=-2A, IB=-0.2A

VBE(sat) IC=-2A, IB=-0.2A

hFE 1 VCE=-1V, IC=-0.1A

hFE 2 VCE=-1V, IC=-2A

hFE 3 VCE=-2V, IC=-5A

OUTPUT

tON

tSTG

tF

0

IB 1

IB2

IB1

INPUT

IB2

20µsec

-IB1=IB2=0.2A

DUTY CYCLE≤ 1%

5Ω

VCC=-10V

MIN TYP MAX UNIT

-10 µA

-10 µA

-0.14 -0.3 V

-.0.9 -1.2 V

60

160

400

50

0.15 1

0.78 2.5 µS

0.18 1

Pulse test : PW ≤350 µS, Duty Cycle ≤2% Pulse

CLASSIFICATION OF hFE2

RANK

RANGE

O

160 ~ 320

Y

200 ~ 400

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2

QW-R204-022,A

Share Link: