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Part Name
Description
2SB1079 View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
2SB1079
Silicon PNP Triple Diffused
Renesas Electronics
2SB1079 Datasheet PDF : 7 Pages
1
2
3
4
5
6
7
Maximum Collector Dissipation
Curve
120
80
40
0
50
100
150
Case temperature T
C
(
°
C)
Typical Output Characteristics
–20
–4
–16
–3.5
–3
–2.5
–2
–1.5
–12
–1
–8
I
B
= –0.5 mA
–4
T
C
= 25
°
C
0
–1
–2
–3
–4
–5
Collector to emitter voltage V
CE
(V)
2SB1079
–100
Area of Safe Operation
i
C(peak)
–30
I
C(max)
DC T
–10
C
= 25
°
C
1
µ
s
100
µ
s
–3
Ta = 25
°
C
–1.0
1 Shot Pulse
–0.3
–0.1
–3
–10
–30
–100 –300
Collector to emitter voltage V
CE
(V)
30000
10000
3000
DC Current Transfer Ratio vs.
Collector Current
Ta
=2–7525
°
5
°
C
°
CC
1000
300
100
30
–0.3
V
CE
= –3 V
Pulse
–1.0
–3
–10
–30
Collector current I
C
(A)
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