2SB1071A View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SB1071A Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1071 2SB1071A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SB1071
2SB1071A
IC=-10mA ,IB=0
VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.1A
VBEsat Base-emitter saturation voltage
IC=-2A; IB=-0.1A
ICBO
Collector cut-off current
VCB=-40V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-0.1A ; VCE=-2V
hFE-2
DC current gain
IC=-1A ; VCE=-2V
fT
Transition frequency
IC=-0.5A ; VCE=-5V
Switching times
ton
Turn-on time
tstg
Storage time
IC=-2A; IB1=-IB2=-0.2A
tf
Fall time
hFE-2 Classifications
R
Q
P
60-120 90-180 130-260
MIN TYP. MAX UNIT
-20
V
-40
-0.5
V
-1.5
V
-50 μA
-50 μA
45
60
260
150
MHz
0.3
μs
0.4
μs
0.1
μs
2
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