2SB1079 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SB1079

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlington Power Transistor

isc Product Specification

2SB1079

DESCRIPTION

·High DC Current Gain-

: hFE = 1000(Min)@ IC= -10A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = -100V(Min)

·Complement to Type 2SD1559

APPLICATIONS

·Designed for low frequency power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

-100

V

VCEO Collector-Emitter Voltage

-100

V

VEBO Emitter-Base Voltage

-7

V

IC

Collector Current-Continuous

-20

A

ICM

Collector Current-Peak

-30

A

IBB

Base Current- Continuous

Collector Power Dissipation

PC

@TC=25℃

Tj

Junction Temperature

Tstg

Storage Temperature Range

-3

A

100

W

150

℃

-55~150 ℃

isc Website：www.iscsemi.cn

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