SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1149
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-1.5mA
VBEsat
Base-emitter saturation voltage
IC=-1.5A ;IB=-1.5mA
ICBO
Collector cut-off current
VCB=-100V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1.5A ; VCE=-2V
hFE-2
DC current gain
IC=-3A ; VCE=-2V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=-1.5A ; IB1=-IB2=-1.5mA
VCC?-40V;RL=27B
MIN TYP. MAX UNIT
-0.9 -1.2
V
-1.5 -2.0
V
-10
µA
-2.0 mA
2000
15000
1000
0.5
µs
2.0
µs
1.0
µs
hFE-1 Classifications
M
L
K
2000-5000 3000-7000 5000-15000
2