B1094 View Datasheet(PDF) - Quanzhou Jinmei Electronic

Part Name

Description

Manufacturer

B1094

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO

Collector-emitter voltage

IC=-30mA; IB=0

VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.2A

VBEsat Base-emitter saturation voltage

IC=-2A ;IB=-0.2A

ICBO

Collector cut-off current

VCB=-60V; IE=0

IEBO

Emitter cut-off current

VEB=-7V; IC=0

hFE-1

DC current gain

IC=-50mA ; VCE=-5V

hFE-2

DC current gain

IC=-0.5A ; VCE=-5V

fT

Transition frequency

IC=-0.1A; VCE=-5V

COB

Collector output capacitance

f=1MHz ; VCB=-10V

‹ hFE-2 Classifications

M

L

K

40-80 60-120 100-200

Product Specification

2SB1094

MIN TYP. MAX UNIT

-60

V

-1.5

V

-2.0

V

-10 μA

-10 μA

20

40

200

20

MHz

70

pF

2

Share Link: