B1098 View Datasheet(PDF) - Quanzhou Jinmei Electronic
Part Name
Description
Manufacturer
B1098 Datasheet PDF : 3 Pages
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JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=-3A; IB=-3mA
VBEsat Base-emitter saturation voltage
IC=-3A; IB=-3mA
ICBO
Collector cut-off current
VCB=-100V ;IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-3A ; VCE=-2V
hFE-2
DC current gain
IC=-5A ; VCE=-2V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-3A ;IB1=-IB2=-3mA
RL=17Ω;VCC=-50V;
hFE-1 Classifications
R
O
Y
2000-5000 3000-7000 5000-15000
Product Specification
2SB1098
MIN TYP. MAX UNIT
-1.5
V
-2.0
V
-1
μA
-3
mA
2000
15000
500
0.5
μs
1
μs
1
μs
2
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