2SB1158 View Datasheet(PDF) - Quanzhou Jinmei Electronic

Part Name

Description

Manufacturer

2SB1158

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEsat Collector-emitter saturation voltage IC=-4A ;IB=-0.4A

VBE

Base-emitter on voltage

IC=-4A ; VCE=-5V

ICBO

Collector cut-off current

VCB=-120V; IE=0

IEBO

Emitter cut-off current

VEB=-3V; IC=0

hFE-1

DC current gain

IC=-20mA ; VCE=-5V

hFE -2

DC current gain

IC=-1A ; VCE=-5V

hFE -3

DC current gain

IC=-4A ; VCE=-5V

COB

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

fT

Transition frequency

IC=-0.5A ; VCE=-5V

‹ hFE-2 classifications

Q

S

P

60-120 80-160 100-200

Product Specification

2SB1158

MIN TYP. MAX UNIT

-2.0

V

-1.8

V

-50

μA

-50

μA

20

60

200

20

180

pF

20

MHz

2

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