2SB1105 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SB1105 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1105
DESCRIPTION
·With TO-220C package
·DARLINGTON
·High DC durrent gain
·Complement to type 2SD1605
APPLICATIONS
·Designed for use in low frequency
power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current-DC
PC
Collector power dissipation
TC=25℃
Tj
Junction temperature
Tstg
Storage temperature
VALUE
-120
-120
-7
-3
30
150
-55~150
UNIT
V
V
V
A
W
℃
℃
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