2SB1145 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SB1145

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-base breakdown voltage

IC=-100μA; IE=0

V(BR)CEO Collector-emitter breakdown voltage IC=-5mA; IB=0

VCEsat Collector-emitter saturation voltage IC=-1.5A ; IB=-3mA

VBEsat Base-emitter saturation voltage

IC=-1.5A ; IB=-3mA

ICBO

Collector cut-off current

VCB=-120V;IE=0

IEBO

Emitter cut-off current

VEB=-5V;IC=0

hFE

DC current gain

IC=-1.5A ; VCE=-3V

Product Specification

2SB1145

MIN TYP. MAX UNIT

-120

V

-120

V

-1.5

V

-2.0

V

-50

μA

-3.0 mA

2000

2

Share Link: