IRL820T View Datasheet(PDF) - Bay Linear
Part Name
Description
Manufacturer
IRL820T Datasheet PDF : 3 Pages
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IRF820
Electrical Characteristics ( TC = 25°C unless otherwise specified)
Symbol
Parameter
Conditions
Min
V(BR)DSS
V(BR)DSS /
∆TJ
ID(ON)
RDS(ON)
VGS(TH)
gfs
Drain-to-source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
On-State Drain Current
(note 2)
Static Drain-to-Source
On-Resistance
Gate Threshold Voltage
Forward Transconductance
VGS = 0V, ID = 250µA
500
Reference to 25°C,
ID = 250µA
-
VGS > ID(ON) x RDS(ON)Max
VGS =10V, ID = 1.5A
(note 4)
VDS = VGS, ID = 250µA
2.0
VDS = 50V, ID = 1.5A
1.5
IDSS
IGSS
Qg
Qqs
Qgd
td ( on)
Tr
td (off)
Tf
LD
LS
Ciss
Coss
Crss
Drain-to-Source Leakage
Current
Gate-to-Source Forward
Leakage
Gate-to-Source Reverse
Leakage
VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V,
-
TC= 125°C
VGS = 20V
-
VG = -20V
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”)
Charge
ID = 2.1A
-
VDS = 400V
-
VGS = 10V
(note 4)
Turn-On Delay Time
Rise Time
Turn -Off Delay Time
Fall Time
Internal Drain Inductance
VDD = 250V
-
ID = 2.1A
-
RG = 18Ω
-
RD = 100Ω (note 4)
-
Between lead 6mm (0.25in.)
-
Internal Source Inductance
from package and center or die
contact
-
Input Capacitance
VGS = 0V
-
Output Capacitance
VDS = 25V
-
Reverse Transfer Capacitance
F = 1.0MHZ
-
Typ
0.59
-
-
-
-
-
-
8.0
8.6
33
16
4.5
7.5
360
92
37
Max
-
2.5
3.0
4.0
-
25
250
100
-100
24
3.3
13
-
-
-
-
-
-
-
-
-
Units
V
V/°C
A
Ω
V
S
µA
nA
nC
nC
ns
nH
pF
Source-Drain Rating Characteristics
Symbol
Parameter
Conditions
Min Typ Max Units
IS
Continuous Source Current
(Body Diode)
MOSFET symbol showing the
-
integral reverse p-n junction
-
2.5
A
ISM
Pulsed Source Current
(Body Diode) (Note 1)
diode.
-
-
8.0
VSD
Diode Forward Voltage (4)
TJ=25°C, IS=2.5A,VGS=DV
-
-
1.6
V
trr
Reverse Recovery Time
TJ=25°C, IF=2.1A
-
-
520 ns
Qrr
Reverse Recovery Charge
di/dt=100A/µs (Note 4)
-
0.70 1.4 µC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by (LS+LD)
Notes: 1. Repetitive Rating; pulse width limited by max. junction temperature.
2a. VDD = 50V, starting Tj = 25°C, L = 440µH RG = 25Ω, IAS = 28A
3. ISD ≤ 2.5A, di/dt ≤ 50A/µs, VDD ≤ V(BR)DSS, Tj ≤ 150°C
4. Pulse with ≤ 300µs; duty cycle ≤ 2%
Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 606-5950, Fax: (925) 940-9556
www.baylinear.com
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