2SB1197 View Datasheet(PDF) - Galaxy Semi-Conductor
Part Name
Description
Manufacturer
2SB1197 Datasheet PDF : 4 Pages
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Production specification
Silicon Epitaxial Planar Transistor
2SB1197
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-50μA,IE=0
-40
V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0
-32
V
Emitter-base breakdown voltage
V(BR)EBO IE=-50μA,IC=0
-5
V
Collector cut-off current
Emitter cut-off current
ICBO
VCB=-20V,IE=0
IEBO
VEB=-4V,IC=0
-0.5 μA
-0.5 μA
DC current gain
hFE
VCE=-3V,IC=-100mA
82
390
Collector-emitter saturation voltage VCE(sat)
Transition frequency
fT
Collector output capacitance
Cob
IC=-500mA, IB=-50mA
VCE=-20V, IC=-10mA
f=100MHz
50
VCB=-10V,IE=0,f=1MHz
-0.5 V
200
MHz
12 30
pF
CLASSIFICATION OF hFE(1)
Range
82-180
Marking
P
120-270
Q
180-390
R
C016
Rev.A
www.gmicroelec.com
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