2SB1186AD View Datasheet(PDF) - SavantIC Semiconductor

Part Name

Description

Manufacturer

2SB1186AD

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB1186A

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; IB=0

V(BR)CBO Collector-base breakdown voltage

IC=-50µA; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-50µA; IC=0

VCEsat Collector-emitter saturation voltage IC=-1A ;IB=-0.1A

VBEsat

Base-emitter saturation voltage

IC=-1A ;IB=-0.1A

ICBO

Collector cut-off current

VCB=-120V; IE=0

IEBO

Emitter cut-off current

VEB=-4V; IC=0

hFE

DC current gain

IC=-0.1A ; VCE=-5V

fT

Transition frequency

IC=-0.1A; VCE=-5V

COB

Collector output capacitance

IE=0;f=1MHz ; VCB=-10V

MIN TYP. MAX UNIT

-160

V

-160

V

-5

V

-2.0

V

-1.5

V

-1.0

µA

-1.0

µA

60

200

50

MHz

30

pF

hFE Classifications

D

E

60-120

100-200

2

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