2SB1190 View Datasheet(PDF) - SavantIC Semiconductor

Part Name

Description

Manufacturer

2SB1190

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB1190

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-5mA , B=0

V(BR)EBO Emitter-base breakdown voltage

IE=-0.5mA ,IC=0

VCEsat Collector-emitter saturation voltage IC=-500mA; IB=-50mA

VBE

Base-emitter on voltage

IC=-300mA ; VCE=-10V

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

hFE-1

DC current gain

hFE-2

DC current gain

COB

Output capacitance

VCB=-200V; IE=0

VEB=-4V; IC=0

IC=-100mA ; VCE=-10V

IC=-300mA ; VCE=-10V

IE=0 ; VCB=-10V,f=1MHz

fT

Transition frequency

IC=-100mA ; VCE=-10V

MIN TYP. MAX UNIT

-150

V

-6

V

-1.0 V

-1.0 V

-50 µA

-50 µA

60

240

50

35

pF

20

MHz

hFE-1 Classifications

Q

P

60-140

100-240

2

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