2SB1193 View Datasheet(PDF) - SavantIC Semiconductor

Part Name

Description

Manufacturer

2SB1193

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB1193

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=-2A; RBE=<;L=10mH

V(BR)EBO Emitter-base breakdown voltage

IE=-50mA; IC=0

VCEsat-1 Collector-emitter saturation voltage IC=-4A ;IB=-8mA

VCEsat-2 Collector-emitter saturation voltage IC=-8A ;IB=-80mA

VBEsat-1 Base-emitter saturation voltage

IC=-4A ;IB=-8mA

VBEsat-2 Base-emitter saturation voltage

IC=-8A ;IB=-80mA

ICBO

Collector cut-off current

VCB=-120V; IE=0

ICEO

Collector cut-off current

VCE=-100V; RBE=<

hFE

DC current gain

IC=-4A ; VCE=-3V

Switching times

ton

Turn-on time

tstg

Storage time

tf

Fall time

IC=-4A ;IB1=-IB2=-8mA

VCC=-50V

MIN TYP. MAX UNIT

-120

V

-7

V

-1.5

V

-3.0

V

-2.0

V

-3.5

V

-100 µA

-10

µA

1000

20000

0.7

µs

3.5

µs

2.0

µs

2

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