SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1254
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO
Collector-emitter voltage
IC=-30mA ; IB=0
-140
V
VCEsat Collector-emitter saturation voltage IC=-6A ;IB=-6mA
-2.5
V
VBEsat
Base-emitter saturation voltage
ICBO
Collector cut-off current
ICEO
Collector cut-off current
IEBO
Emitter cut-off current
IC=-6A ;IB=-6mA
VCB=-160V; IE=0
VCE=-140V; IB=0
VEB=-5V; IC=0
-3.0
V
-100
µA
-100
µA
-100
µA
hFE-1
DC current gain
IC=-1A ; VCE=-5V
2000
hFE -2
DC current gain
fT
Transition frequency
Switching times
IC=-6A ; VCE=-5V
5000
IC=-0.5A ; VCE=-10V;f=1MHz
30000
20
MHz
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-6A; VCC=50V
IB1=-IB2=-6mA
1.0
µs
1.5
µs
1.2
µs
2