2SB1186 View Datasheet(PDF) - Quanzhou Jinmei Electronic
Part Name
Description
Manufacturer
2SB1186 Datasheet PDF : 3 Pages
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JMnic
Silicon PNP Power Transistors
Product Specification
2SB1186
DESCRIPTION
·
·With TO-220Fa package
·Low collector saturation votlage
·Complement to type 2SD1763
·High breakdown voltage
APPLICATIONS
·For use in low frequency power
amplifer applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector -emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25℃
TC=25℃
VALUE
-120
-120
-5
-1.5
-3.0
2.0
20
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
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