2SB1186A View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SB1186A Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1186A
DESCRIPTION
·
·With TO-220Fa package
·Low collector saturation votlage
·Complement to type 2SD1763A
·High breakdown voltage
APPLICATIONS
·For use in low frequency power
amplifer applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
固I电NC半H导A体NGE SEMICONDUCTOR Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector -emitter voltage
VEBO
Emitter-base voltage
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-160
-160
-5
UNIT
V
V
V
IC
Collector current
-1.5
A
ICM
Collector current-peak
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
Ta=25℃
TC=25℃
-3.0
A
2.0
W
20
150
℃
-55~150
℃
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