2SB1462L View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
2SB1462L Datasheet PDF : 2 Pages
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Transistors
2SB1462L
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD2216L
■ Features
• High forward current transfer ratio hFE
• Mold leadless type package, allowing downsizing and thinning of
the equipment and automatic insertion through the tape packing
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
−60
V
Collector-emitter voltage (Base open) VCEO
−50
V
Emitter-base voltage (Collector open) VEBO
−7
V
Collector current
IC
−100
mA
Peak collector current
ICP
−200
mA
Collector power dissipation *
PC
150
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg −55 to +125 °C
Note) *: Print circuit board: Copper foil area of 20.0 mm2 or more, and the
board thickness of 1.6 mm for the collector portion
3
2
4
1
1.00±0.05
Unit: mm
0.020±0.010
0.60±0.05
0.30±0.03
4
1
3
Marking Symbol: J
0.60
2
0.05±0.03
1: Base
2: Emitter
3: Collector
4: Collector
ML4-N1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector-base voltage (Emiter open) VCBO IC = −10 µA, IE = 0
−60
Collector-emitter voltage (Base open) VCEO IC = −100 µA, IB = 0
−50
Emiter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0
−7
Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0
Collector-emitter cutoff current (Base open) ICEO VCE = −10 V, IB = 0
Forward current transfer ratio
hFE VCE = −10 V, IC = −2mA
180
Collector-emitter saturation voltage
VCE(sat) IC = −100 mA, IB = −10 mA
Transition frequency
fT
VCB = −10 V, IE = 1 mA, f = 200 MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = −10 V, IE = 0, f = 1 MHz
Typ Max
− 0.3
80
2.7
− 0.1
−100
390
− 0.5
Unit
V
V
V
µA
µA
V
MHz
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: April 2003
SJC00088BED
1
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