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Part Name
Description
2SB1400 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
Manufacturer
2SB1400
Silicon PNP Epitaxial
Hitachi -> Renesas Electronics
2SB1400 Datasheet PDF : 6 Pages
1
2
3
4
5
6
Maximum Collector Dissipation Curve
30
20
10
0
50
100
150
Case Temperature T
C
(
°
C)
Typical Output Characteristics
–5
–4
–2.0
–1.8
–1.4
–1.–61.2
–1.0
–0.8
–3
–0.6
–0.4
–2
–1
T
C
= 25
°
C
I
B
= 0
I
B
= –0.2 mA
0
–1
–2
–3
–4
–5
Collector to emitter Voltage V
CE
(V)
2SB1400
Area of Safe Operation
–10
i
C (peak)
1
µ
s
–3
I
C (max)
–1.0
–0.3
–0.1
–0.03 Ta = 25
°
C
1 Shot pulse
–0.01
–3
–10
–30
–100 –300
Collector to emitter Voltage V
CE
(V)
10,000
3,000
1,000
DC Current Transfer Ratio vs.
Collector Current
Ta
=
75
°
C
25–
°
2C5
°
C
300
V
CE
= –3 V
100
–0.1 –0.3
–1.0
–3
–10
Collector current I
C
(A)
3
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