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Part Name
Description
2SB1409 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
Manufacturer
2SB1409
Silicon PNP Epitaxial
Hitachi -> Renesas Electronics
2SB1409 Datasheet PDF : 7 Pages
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2SB1409(L)/(S)
Saturation Voltage vs. Collector Current
–10
–1.0
–0.1
–0.01
–0.001
l
C
= 10 l
B
Ta = 25
°
C
–0.01
–0.1
–1.0
Collector current I
C
(A)
Saturation Voltage vs. Collector Current
–10
–3
–1.0
–0.3
–0.1
–0.03
l
C
= 10 l
B
Ta = 25
°
C
–0.1 –0.3
–1.0 –3.0
Collector current I
C
(A)
Typical Transfer Characteristics
–2.0
–1.6
–1.2
–0.8
–0.4
0
0
V
CE
= –5 V
Ta = 25
°
C
–0.4 –0.8 –1.2 –1.6 –2.0
Base to emitter voltage V
BE
(V)
1,000
Gain Bandwidth Product vs.
Collector Current
300
100
30
10
–0.01
V
CE
= –5 V
Ta = 25
°
C
–0.03
–0.1 –0.3
–1.0
Collector current I
C
(A)
4
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