2SB1362 View Datasheet(PDF) - SavantIC Semiconductor

Part Name

Description

Manufacturer

2SB1362

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB1362

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; IB=0

VCEsat Collector-emitter saturation voltage IC=-7A; IB=-0.7A

VBE

Base-emitter on voltage

IC=-7A;VCE=-5V

ICBO

Collector cut-off current

VCB=-150V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE-1

DC current gain

IC=-20mA ; VCE=-5V

hFE-2

DC current gain

IC=-1A ; VCE=-5V

hFE-3

DC current gain

IC=-7A ; VCE=-5V

fT

Transition frequency

IC=-0.5A ; VCE=-5V

COB

Collector output capacitance

f=1MHz;VCB=-10V

MIN TYP. MAX UNIT

-150

V

-2.0

V

-1.8

V

-50

µA

-50

µA

20

60

200

15

15

MHz

270

pF

hFE-2 Classifications

Q

P

60-120

100-200

2

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