2SB1370 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SB1370

Silicon PNP Power Transistor

Inchange Semiconductor 

isc Silicon PNP Power Transistor

INCHANGE Semiconductor

2SB1370

DESCRIPTION

·Low Collector Saturation Voltage-

: VCE(sat)= -0.3V(Typ.)@IC= -2A

·Good Linearity of hFE

·Wide Area of Safe Operation

APPLICATIONS

·Designed for power switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-60

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-3

A

ICM

Collector Current-Peak

Collector Power Dissipation

@ Ta=25℃

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

-6

A

2

W

30

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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