2SB1383 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SB1383

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlington Power Transistor

isc Product Specification

2SB1383

DESCRIPTION

·High DC Current Gain

: hFE= 2000(Min.)@ IC= -12A, VCE= -4V

·High Collector-Emitter Breakdown Voltage-

: V(BR)CEO = -120V(Min)

·Complement to Type 2SD2083

APPLICATIONS

·Designed for driver of solenoid, motor and general

purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO Collector-Base Voltage

-120

V

VCEO Collector-Emitter Voltage

-120

V

VEBO Emitter-Base Voltage

-6

V

IC

Collector Current-Continuous

-25

A

ICM

Collector Current-Peak

-40

A

IBB

Base Current- Continuous

PC

Collector Power Dissipation

@TC=25℃

Tj

Junction Temperature

Tstg

Storage Temperature Range

-2

A

120

W

150

℃

-55~150 ℃

isc Website：www.iscsemi.cn

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