2SB1391 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SB1391 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1391
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; RBE=∞
V(BR)CBO Collector-base breakdown voltage
IC=-100μA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-50mA; IC=0
VCEsat-1 Collector-emitter saturation voltage IC=-4A ;IB=B -8mA
VCEsat-2 Collector-emitter saturation voltage IC=-8A ;IB=B -80mA
VBEsat-1 Base-emitter saturation voltage
IC=-4A ;IB=B -8mA
VBEsat-2 Base-emitter saturation voltage
IC=-8A ;IB=B -80mA
ICBO
Collector cut-off current
VCB=-100V; IE=0
ICEO
Collector cut-off current
VCE=-100V; RBE=∞
hFE
DC current gain
IC=-4A ; VCE=-3V
MIN TYP. MAX UNIT
-120
V
-120
V
-7
V
-1.5
V
-3.0
V
-2.0
V
-3.5
V
-10
μA
-10
μA
1000
20000
2
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