2SB1393 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SB1393 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1393 2SB1393A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SB1393
2SB1393A
IC=-30mA , IB=0
VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.375A
VBE
Base-emitter voltage
VCE=-4V; IC=-3A
ICES
Collector
cut-off current
2SB1393 VCE=-60V ;VBE=0
2SB1393A VCE=-80V; VBE=0
ICEO
Collector
cut-off current
2SB1393 VCE=-30V; IB=0
2SB1393A VCE=-60V; IB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
hFE-2
fT
DC current gain
DC current gain
Transition frequency
IC=-1A ; VCE=-4V
IC=-3A ; VCE=-4V
IC=-0.1A; VCE=-5V;f=1MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-1A ;IB1=-0.1A
IB2=0.1A;VCC=-50V
hFE-1 Classifications
Q
P
70-150
120-250
MIN TYP. MAX UNIT
-60
V
-80
-1.2
V
-1.8
V
-200 μA
-300 μA
-1.0
mA
70
250
10
20
MHz
0.5
μs
1.2
μs
0.3
μs
2
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