2SB1495 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SB1495

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlington Power Transistor

isc Product Specification

2SB1495

DESCRIPTION

·High DC Current Gain-

: hFE= 2000(Min)@ (VCE= -2V, IC= -2A)

·Low-Collector Saturation Voltage-

: VCE(sat)= -1.5V(Max.)@IC= -1.5A

·Complement to Type 2SD2257

APPLICATIONS

·Designed for high power switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-100

V

VCEO Collector-Emitter Voltage

-100

V

VEBO

Emitter-Base Voltage

-8

V

IC

Collector Current-Continuous

-3

A

ICM

Collector Current-Pulse

-5

A

IB

Base Current-Continuous

Collector Power Dissipation

@Ta=25℃

PC

Collector Power Dissipation

@TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature

-0.3

A

2

W

20

150

℃

-55~150

℃

isc Website：www.iscsemi.cn

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