2SB1492 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SB1492 Datasheet PDF : 2 Pages
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Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= -30mA; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= -5A; IB= -5mA
VsE(sat) Base-Emitter Saturation Voltage
lc= -5A; !B= -5mA
ICBO
Collector Cutoff Current
VCB=-130V;IE=0
ICEO
Collector Cutoff Current
VCE=-110V;IB=0
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
hpE-1
DC Current Gain
lc=-1A;VCE=-5V
hpE-2
DC Current Gain
lc= -5A; VCE= -5V
fi
Current-Gain—Bandwidth Product lc=-0.5A; VCE=-10V
Switching Times
ton
Turn-on Time
*stg
Storage Time
tf
Fall Time
lc= -5A; lai= -Is2= -5mA,
Vcc= -50V,
hFE.2 Classifications
Q
P
5000-15000 8000-30000
2SB1492
MIN TYP. MAX UNIT
-110
V
-2.5
V
-3.0
V
-100
uA
-100
uA
-100
uA
2000
5000
30000
20
MHz
0.9
us
2.5
us
1.7
us
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