2SB1557 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SB1557 Datasheet PDF : 4 Pages
| |||
2SB1557
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor)
2SB1557
Power Amplifier Applications
Unit: mm
• High breakdown voltage: VCEO = −140 V (min)
• Complementary to 2SD2386
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
Unit
−140
V
−140
V
−5
V
−7
A
−0.1
A
70
W
150
°C
−55 to 150
°C
Equivalent Circuit
COLLECTOR
BASE
JEDEC
―
JEITA
―
TOSHIBA
2-16C1A
Weight: 4.7 g (typ.)
≈ 100 Ω
EMITTER
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
VCB = −140 V, IE = 0
VEB = −5 V, IC = 0
V (BR) CEO IC = −50 mA, IB = 0
hFE (1)
VCE = −5 V, IC = −6 A
(Note)
hFE (2)
VCE (sat)
VCE = −5 V, IC = −10 A
IC = −6 A, IB = −6 mA
VBE
VCE = −5 V, IC = −6 A
fT
VCE = −5 V, IC = −1 A
Cob
VCB = −10 V, IE = 0, f = 1 MHz
―
― −5.0 µA
―
― −5.0 µA
−140 ―
―
V
5000 ― 30000
2000 ―
―
―
― −2.5
V
―
― −3.0
V
―
30
― MHz
― 120 ―
pF
Note: hFE (1) classification A: 5000 to 12000, B: 9000 to 18000, C: 15000 to 30000
1
2004-07-07
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