B553 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

B553

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB553

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0

-50

V

VCEsat Collector-emitter saturation voltage IC=-4A; IB=-0.4A

-0.2 -0.4

V

VBEsat Base-emitter saturation voltage

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

IC=-4A; IB=-0.4A

VCB=-70V; IE=0

VEB=-5V; IC=0

-0.9 -1.2

V

-30 μA

-50 μA

hFE-1

DC current gain

IC=-1A ; VCE=-1V

70

240

hFE-2

DC current gain

IC=-4A ; VCE=-1V

30

COB

Collector output capacitance

IE=0 ; VCB=-10V; f=1MHz

250

pF

体 fT

Transition frequency

固I电NC半H导ANGE SEMICONDUCTOR Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=-1A ; VCE=-4V

IB1=-IB2=-0.3A; VCC≈-30V

RL=10Ω

10

MHz

0.2

μs

2.5

μs

0.5

μs

‹ hFE-1Classifications

O

Y

70-140

120-240

2

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