2SB1588 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SB1588

Silicon PNP Darlington Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Darlington Power Transistors

Product Specification

2SB1588

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0

-150

V

VCEsat Collector-emitter saturation voltage IC=-7 A;IB=-7m A

-2.5

V

VBEsat Base-emitter saturation voltage

IC=-7 A;IB=-7m A

-3.0

V

ICBO

Collector cut-off current

VCB=-160V; IE=0

-100 μA

IEBO

Emitter cut-off current

VEB=-5V; IC=0

-100 μA

hFE

DC current gain

IC=-7A ; VCE=-4V

5000

fT

Transition frequency

IC=-2A ; VCE=-12V

50

MHz

COB

Output capacitance

IE=0; VCB=-10V;f=1MHz

230

pF

体 Switching times

固I电NC半H导ANGE SEMICONDUCTOR ton

Turn-on time

ts

Storage time

tf

Fall time

IC=-7A;RL=10Ω

IB1=-IB2=-7mA

VCC=-70V

0.8

μs

3.0

μs

1.2

μs

‹ hFE classifications

O

P

Y

5000-12000 6500-20000 15000-30000

2

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