2SB1625 View Datasheet(PDF) - SavantIC Semiconductor

Part Name

Description

Manufacturer

2SB1625

Silicon PNP Darlington Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Darlington Power Transistors

Product Specification

2SB1625

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO

Collector-emitter breakdown voltage IC=-50mA; IB=0

VCEsat Collector-emitter saturation voltage IC=-5 A;IB=-5m A

VBEsat

Base-emitter saturation voltage

IC=-5 A;IB=-5m A

ICBO

Collector cut-off current

VCB=-110V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

IC=-5A ; VCE=-4V

fT

Transition frequency

IC=0.5A ; VCE=-12V

COB

Output capacitance

IE=0; VCB=-10V;f=1MHz

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=-5A;RL=6>

IB1=-IB2=-5mA

VCC=-30V

MIN TYP. MAX UNIT

-110

V

-2.5

V

-3.0

V

-100 µA

-100 µA

5000

100

MHz

110

pF

1.1

µs

3.2

µs

1.1

µs

hFE classifications

O

P

5000-12000 6500-20000

Y

15000-30000

2

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