2SB546A View Datasheet(PDF) - Quanzhou Jinmei Electronic
Part Name
Description
Manufacturer
2SB546A Datasheet PDF : 4 Pages
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JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=-0.5mA; IE=0
V(BR)EBO Emitter-base breakdown votage
IE=-0.5mA; IB=0
VCEsat Collector-emitter saturation voltage IC=-500m A;IB=-50m A
ICBO
Collector cut-off current
VCB=-150V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE
DC current gain
IC=-0.4A ; VCE=-10V
fT
Transition frequency
IC=-0.4A ; VCE=-10V
hFE classifications
M
L
K
40-80 60-120 100-200
Product Specification
2SB546A
MIN TYP. MAX UNIT
-150
V
-200
V
-5
V
-1.0
V
-50 μA
-50 μA
40
240
5
MHz
2
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