2SB556 View Datasheet(PDF) - Quanzhou Jinmei Electronic
Part Name
Description
Manufacturer
2SB556 Datasheet PDF : 3 Pages
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JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SB555
2SB556
IC=-0.1A ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=-10mA ;IC=0
VCEsat
Collector-emitter
saturation voltage
2SB555 IC=-7A; IB=-0.7A
2SB556 IC=-6A; IB=-0.6A
VBE
Base-emitter on voltage
IC=-7A ; VCE=-5V
ICBO
Collector cut-off current
VCB=-50V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE
DC current gain
IC=-2A ; VCE=-5V
COB
Output capacitance
IE=0 ; VCB=-10V; f=1.0MHz
fT
Transition frequency
IC=-2A ; VCE=-5V
Product Specification
2SB555 2SB556
MIN TYP. MAX UNIT
-140
V
-120
-5
V
-3.0
V
-2.5
V
-0.1 mA
-0.1 mA
40
140
330
pF
6
MHz
2
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