2SB1658 View Datasheet(PDF) - Quanzhou Jinmei Electronic

Part Name

Description

Manufacturer

2SB1658

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0

VCEsat-1 Collector-emitter saturation voltage IC=-1A; IB=-50mA

VCEsat-2 Collector-emitter saturation voltage IC=-2A; IB=-100mA

VCEsat-3 Collector-emitter saturation voltage IC=-4A; IB=-200mA

VBEsat Base-emitter saturation voltage

IC=-1A; IB=-100mA

ICBO

Collector cut-off current

VCB=-30V; IE=0

IEBO

Emitter cut-off current

VEB=-6V; IC=0

hFE-1

DC current gain

IC=-1A ; VCE=-2V

hFE-2

DC current gain

IC=-4A ; VCE=-2V

fT

Transition frequency

IC=-50mA ; VCE=-10V

COB

Collector output capacitance

IE=0;f=1MHz ; VCB=-10V

Product Specification

2SB1658

MIN TYP. MAX UNIT

-30

V

-0.15

V

-0.25

V

-0.5

V

-1.5

V

-0.1 μA

-0.1 μA

150

600

50

95

MHz

100

pF

2

Share Link: