2SB1647 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SB1647 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Darlington Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-10A ;IB=-10mA
VBEsat Base-emitter saturation voltage
IC=-10A ;IB=-10mA
ICBO
Collector cut-off current
VCB=-150V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE
DC current gain
IC=-10A ; VCE=-4V
Cob
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
fT
Transition frequency
IC=-2A ; VCE=-12V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-10A;RL=4Ω
IB1=- IB2=-10mA
VCC=-40V
hFE Classifications
O
P
Y
5000-12000 6500-20000 15000-30000
Product Specification
2SB1647
MIN TYP. MAX UNIT
-150
V
-2.5
V
-3.0
V
-100 μA
-100 μA
5000
320
pF
45
MHz
0.7
μs
1.6
μs
1.1
μs
2
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