2SB616 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SB616

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0

V(BR)CBO Collector-base breakdown voltage

IC=-1mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=-3A ;IB=B -0.3A

VBE

Base-emitter on voltage

IC=-1A;VCE=-5V

ICBO

Collector cut-off current

VCB=-100V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

IC=-1A ; VCE=-5V

fT

Transition frequency

IC=-1A ; VCE=-5V

COB

Collector output capacitance

IE=0;f=1MHz;VCB=-10V

Product Specification

2SB616

MIN TYP. MAX UNIT

-100

V

-100

V

-5

V

-1.5

V

-1.5

V

-0.1 mA

-0.1 mA

50

11

MHz

140

pF

2

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