2SB679 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SB679

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SB679

DESCRIPTION

·High Power Dissipation-

: PC= 100W(Max.)@TC=25℃

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -120V(Min.)

·Complement to Type 2SC1079

APPLICATIONS

·Designed for audio power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

-120

V

VCEO Collector-Emitter Voltage

VEBO Emitter-Base Voltage

IC

Collector Current-Continuous

IE

Emitter Current-Continuous

Collector Power Dissipation

PC

@TC=25℃

Tj

Junction Temperature

Tstg

Storage Temperature

-120

V

-5

V

-12

A

12

A

100

W

150

℃

-65~150 ℃

isc Website：www.iscsemi.cn

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